1 emitter 2 base 3 collector features excellent hfe linearity. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -6 v collector current i c -0.15 a collector power dissipation p c 0.2 w junction temperature t j 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage bv cbo i c =-50a -60 v collector-emitter breakdown voltage bv ceo i c =-1ma -50 v emitter-base breakdown voltage bv ebo i e =-50a -6 v collector cutoff current i cbo v cb =-60v -0.1 a emitter cutoff current i ebo v eb =-6v -0.1 a collector-emitter saturation voltage v ce(sat) i c /i b =-50ma/-5ma -0.5 v dc current transfer ratio h fe v ce =-6v, i c =-1ma 120 560 transition frequency f t v ce =-12v, i e output capacitance c ob v cb =-12v, i e =0a, f=1mhz 4.0 5.0 pf h fe classification marking fq fr fs h fe 120 270 180 390 270 560 =2ma,f=100mhz 140 mhz sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type transistors 2SA1576A product specification 4008-318-123
electrical characteristic curves fig.1 grounded emitter propagation characteristics ? 0 . 2 collector current : ic ( ma) ? 50 ? 20 ? 10 ? 5 ? 2 ? 1 ? 0.5 ? 0.2 ? 0.1 ? 0 . 4 ? 0 . 6 ? 0 . 8 ? 1 . 0 ? 1 . 2 ? 1 . 4 ? 1 . 6 v ce = ? 6v base to emitter voltage : v be ( v) ta=100 ? c 25 ? c ? 40 ? c fig.2 grounded emitter output characteristics (i) ? 0.4 ? 4 ? 8 ? 1.2 0 ? 2 ? 6 ? 10 ? 0.8 ? 1.6 ? 2.0 ? 3.5 a ? 7.0 ? 10.5 ? 14.0 ? 17.5 ? 21.0 ? 24.5 ? 28.0 ? 31.5 i b =0 ta=25 ? c ? 35.0 collector current : i c ( ma) collector to mitter voltage : v ce ( v) fig.3 grounded emitter output characteristics (ii) ? 40 ? 80 ? 5 ? 3 ? 4 ? 2 ? 1 ? 20 ? 60 ? 100 0 i b =0 ta=25 ? c collector current : i c ( ma ) collector to emitter voltage : v ce ( v) ? 50 a ? 100 ? 150 ? 200 ? 250 ? 500 ? 450 ? 400 ? 350 ? 300 fig.4 dc current gain vs. collector current (i) 500 200 100 50 ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 dc current gain : h fe ta=25 ? c v ce = ? 5v ? 3v ? 1v collector current : i c ( ma) fig.5 dc current gain vs. collector current (ii) 500 200 100 50 ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 dc current gain : h fe collector current : i c ( ma) v ce = ? 6v ta=100 ? c ? 40 ? c 25 ? c fig.6 collector-emitter saturation voltage vs. collector current (i) ? 0.1 ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 ? 1 ? 0.5 ? 0.2 ? 0.05 ta=25 ? c collector current : i c ( ma) i c /i b = 50 20 10 collector saturation voltage : v ce(sat) ( v) fig.7 collector-emitter saturation voltage vs. collector current (ii) ? 0.1 ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 ? 1 ? 0.5 ? 0.2 ? 0.05 collector current : i c ( ma) l c /l b =10 ta=100 ? c 25 ? c ? 40 ? c collector saturation voltage : v ce(sat) ( v) fig.8 gain bandwidth product vs. emitter current 5 0 100 0 2 5 . 0 50 100 200 500 1000 1 2 5 10 emitter current : i e ( ma) transition frequency : f t ( mhz) ta=25 ? c v ce = ? 12v fig.9 collector output capacitance vs. collector-base voltage emitter inputcapacitance vs. emitter-base voltage collector to base voltage : v cb (v) emitter to base voltage : v eb (v) collector output capacitance : cob ( pf) emitter input capacitance : cib ( pf) ? 0.5 ? 20 2 5 10 ? 1 ? 2 ? 5 ? 10 20 cib cob ta=25 ? c f=1mhz i e = 0a i c = 0a smd type transistors 2SA1576A sales@twtysemi.com 2 of 2 http://www.twtysemi.com product specification 4008-318-123
|
